Tongxing Yan

Assistant Researcher College of Science, Institute for Quanfum Science and Engineering

Assistant Researcher of Institute for Quanfum Science and Engineering, Interested in Quantum control and quantum simulation with superconducting qubits.

Educational Background

2008-2012 Bachelor in Physics, School of Physics, Peking University

2012-2017 Ph.D. in Physics, School of Physics, Peking University

Working Experience

2019.09-present, Assistant Researcher in Institute for Quantum Science and Engineering, SUSTech

2017.07-2019.08 Postdoctoral Researcher in school of physics, SUSTech

2016.01-2016.12 visiting scholar in Institute of Photonics, University of Strathclyde, UK

Personal Profile

Research

Quantum control and quantum simulation with superconducting qubits

Publications Read More

.”Simulation of Higher-Order Topological Phases and Related Topological Phase Transitions in a Superconducting Qubit”,(arXiv:2001.03933(2020))

. “Quantum Control via Stimulated Raman User-defined Passage”,(arXiv:1912.10927v2(2019) )

.“Simulation of a topological phase transition in a Kitaev chain with long-range coupling using a superconducting circuit” ,Physical Review B.101.035109(2020)

.“Experimental Realization of Nonadiabatic Shortcut to Non-Abelian Geometric Gates”, Physical Review Letters 122, 080501 (2019).

. “Experimentally study electron overflow from quantum wells into p-side GaN and its effect on the efficiency droop in InGaN/GaN blue-light-emitting-diodes”, Superlattices and Microstructures 109, 117-122 (2017).

. “Optical properties of a novel parabolic quantum well structure in InGaN/GaN light emitters”, physica status solidi (A), 212, 5(925-929), (2015).

. “Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection”, Journal of Applied Physics 118, 125709 (2015).