Research Associate Professor/Doctoral supervisor School of Microelectronics

Dr. Wang is an associate professor and master supervisor of the School of Microelectronics. She has hosted or mainly participated in the National Natural Science Foundation for Young Scientists of China, China Postdoctoral Science Foundation Project,Guangdong Provincial Public Welfare Research and Capacity Building Special Project, National Key Technology Research and Development Program of China during the “13th Five Year Plan” etc. She published more than 30 SCI / EI papers, wrote important chapters of professional English books, authorized / applied for more than 40 domestic invention patents and 4 PCT patents. She participated in writing gallium nitride microwave RF technology Roadmap(2020 ver.). Her main research focuses on the structure design and fabrication of GaN power and RF devices for 5G communication, smart power grid and new energy vehicles application.

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GaN devices & power system

GaN RF devices & power amplifier

Publications Read More

Selected Publication

  1. Wang Qing, Liang Zhiwen, Wang Qi*, & Zhang Guoyi. (2020). Fabrication of a thermostable Ga-face GaN template on a molybdenum substrate via layer transfer. Optical Materials Express, 10(10), 2447-2455.
  2. He Jiaqi, Cheng Wei-Chih, Jiang Yang, Fan Mengya, Zhou Guangnan, Yang Gaiying, Jiang Lingli, Wang Xiang, Wu Zhanxia, Wang Qing*, Yu Hongyu*. Distinguishing various influences on the electrical properties of thin-barrier AlGaN/GaN heterojunctions with in-situ SiN caps[J]. Materials Science in Semiconductor Processing, 2021, 132(6798):105907.
  3. Cheng WeiChih, Zeng Fanming, He Minghao, Wang Qing*, ChanMansun,&YuHongyu*. (2020). Quasi-Normally-Off AlGaN/GaN HEMTs with SiN Stress Liner andComb Gate for Power Electronics Applications. Ieee Journal Of The Electron Devices Society,8, 1138-1144.
  4. Cheng WeiChih, Zhou Guangnan, Zeng Fanming, Jiang Yang, Jiang Lingli, Wang Qing* &Yu Hongyu*. (2020). Technological Development in Pursuit of High-Performance Normally-off GaN-based HEMTs. 2020 Ieee 15th International Conference On Solid-state And Integrated Circuit Technology, Icsict 2020 – Proceedings.
  5. Hu Qiaoyu, Zeng Fanming, Cheng Wei Chih, Zhou Guangnan, Wang Qing*, Yu Hongyu*. (2020). Reducing dynamic on-resistance of p-GaN gate HEMTs using dual field plate configurations. Proceedings Of The International Symposium On The Physical And Failure Analysis Of Integrated Circuits, Ipfa, 2020-July.
  6. Jiang Yang , Wan Ze Yu , Zhou Guang Nan , Fan Meng Ya , Yang GaiYing , Sokolovskij R, Xia Guang Rui , Wang Qing* &Yu Hong Yu*. (2020). A Novel Oxygen-Based Digital Etching Technique for p-GaN/AlGaN Structures without Etch-Stop Layers. Chinese Physics Letters, 37(6).
  7. Jiang Yang, Qiao Zepeng, Du Fangzhou, Yang Gaiying, Fan Mengya, Tang Xinyi, Wang Qing* and Yu Hongyu*. “Achieving A Low Contact Resistivity of 0.11 Ω·mm for Ti5Al1/TiN S/D Contact on Al2Ga0.8N/ AlN/GaN Structure without Barrier Recess,” 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2021, pp. 1-3.
  8. He, Jiaqi, Cheng Wei-Chih, Jiang Yang, Wang Qing*, Yu Hongyu*. “Study of bilayer Al2O3/in-situ SiNx dielectric stacks for gate modulation in ultrathin-barrier AlGaN/GaN MIS-HEMTs,” 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2021, pp. 1-3.
  9. Zeng Fanming , Wang Qing , Lin Shuxun , Wang Liang Zhou Guangnan, Cheng Wei-Chih, He Minghao, Jiang Yang, Ge Qi, Li Ming & Yu Hongyu*. (2020). Study on the Optimization of Off-State Breakdown Performance of p-GaN HEMTs.
  10. Zhou, Guangnan, Zeng Fanming, Jiang Yang, Wang Qing ,Jiang Lingli ,Xia Guangrui* and Yu Hongyu*. “Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-Gate-Sweep Measurements,” in IEEE Transactions on Electron Devices, vol. 68, no. 4, pp. 1518-1523, April 2021.
  11. He Minghao,Cheng Wei-Chih, Zeng Fanming,Qiao Zepeng, Chien Yu-Chieh,Jiang Yang,Li Wenmao, Jiang Lingli, Wang Qing ,Ang Kah-Wee* and Yu Hongyu*. Improvement of β -GaO MIS-SBD Interface Using Al-Reacted Interfacial Layer[J]. IEEE Transactions on Electron Devices, 2021, PP(99):1-6.
  12. Zhou Guangnan, Jiang Yang, Yang Gaiying,Wang Qing,Fan Mengya, Jiang Lingli,Yu Hongyu* and Xia Guangrui*. Formation of ultra-high-resistance Au/Ti/p-GaN junctions and the applications in AlGaN/GaN HEMTs[J]. AIP Advances,2021,11(4).
  13. Yin Jiahao, Chen Liang, Luo Yumeng, Wang Qing,Yu Hongyu*, Li Kwai Hei*. “Performance of InGaN green light-emitting diodes with on-chip photodetectors based on wire-bonding and flip-chip configurations,” Appl. Opt. 60, 2599-2603 (2021).
  14. He Jiaqi, Cheng Wei-Chih,Wang Qing, Cheng Kai, Yu Hongyu*, and Chai Yang *. Recent Advances in GaN-Based Power HEMT Devices[J]. ADVANCED ELECTRONIC MATERIALS,2021,7(4).
  15. Yin Jiahao , An Xiaoshuai ,Chen Liang, Li Jing, Wu Jianan, Luo Yumeng, Wang Qing, Yu Hongyu and Li, Kwai Hei*. “Phosphor-Based InGaN/GaN White Light-Emitting Diodes With Monolithically Integrated Photodetectors,” in IEEE Transactions on Electron Devices, vol. 68, no. 1, pp. 132-137, Jan. 2021.
  16. Tang Chuying, Yu Hongyu, Sun Chengliang, Zhang Yi, Wang Liang, Cai Yao, Wu Jingyi, Wang Qing, Liu Sheng *.Investigation on the release of residual stress in a folded structure applied to MEMS devices[J]. Micro and Nano Letters,2021,16(9).
  17. Zhang Yi, Wang Liang, Zou Yang, Xu Qinwen, Liu Jieyu, Wang Qing, Tovstopyat Alexander, Liu Wenjuan, Sun Chengliang*, Yu Hongyu*. “Lithium Niobate Thin Film Based A3 Mode Resonators with High Effective Coupling Coefficient of 6.72%,” 2021 IEEE 34th International Conference on Micro Electro Mechanical Systems (MEMS), 2021, pp. 466-469.
  18. Cheng Wei-Chih, He Minghao, Lei Siqi, Wang Liang, Wu Jingyi, Zeng Fanming, Hu Qiaoyu, Wang Qing, Chan Mansun, Xia Guangrui (Maggie)* &Yu Hongyu*.(2020). Increasing threshold voltage and reducing leakage of AlGaN/GaN HEMTs using dual-layer SiNx stressors. Semiconductor Science And Technology, 35(4).
  19. Tang Chuying, Wang Liang, Cai Yao, Zhang Yi, Wang Qing, Liu Sheng* &Yu Hongyu*. (2020). Residual Stress Analysis and Structural Parameters Optimization of Corrugated Diaphragms Applied to MEMs Device. 4th Electron Devices Technology And Manufacturing Conference, Edtm 2020 – Proceedings.
  20. He Minghao, Zeng Fanming, Cheng Wei Chih, Wang Qing, Yu Hongyu*&Ang Kah Wee*. (2020). Beta-Ga2O3MOSFET Device Optimization via TCAD. 4th Electron Devices Technology And Manufacturing Conference, Edtm 2020 – Proceedings.
  21. Cheng Wei-Chih, He Minghao, Zeng Fanming, Wang Qing, Chan Mansun & Yu Hongyu*.(2020). Quasi-Normally-Off AlGaN/GaN HEMTs with Strained Comb Gate for Power Electronics Applications.
  22. Qing Wang, Yan Zhou, Hua Zheng, Jian Shi, Chunzeng Li, Chanmin Q.Su, Lei Wang, Chan Luo, Diangang Hu, Jian Pei, Junbiao Peng, Yong Cao, Modifying Organic/metal interface via Solvent Treatment to Improve Electron Injection in Organic Light-Emitting Diodes. Organic Electronics, 12(2011)1858-1863.
  23. Qing Wang, Yanwen Chen, Yina Zheng, Na Ai, Shaohu Han, Wei Xu, Zhixiong Jiang, Yanhong Meng, Diangang Hu, Junbiao Peng, Jian Wang, Yong Cao. Solvent Treatment as an Efficient Anode Modification Method to Improve Device Performance of Polymer Light-Emitting Diodes. Organic Electronics, 14(2013)548-553.
  24. Qing Wang, Yang Liu, Yongjian Sun, Yuzhen Tong, Guoyi Zhang. Fabrication of extremely thermal-stable GaN template on Mo substrate using double bonding and step annealing process. Journal of Semiconductors, 2016.3.9.
  25. Hua Zheng, Yina Zheng, Nanliu Liu, Na Ai, Qing Wang, Sha Wu, Junbiao Peng, Yong Cao. All-Solution Processed Polymer Light-Emitting Diode Displays. Nature Communication, 4(2013)1971-1976.


English Book

  1. Wang Qing, Yu Gang, Wang Jian, Organic Light-Emitting Materials and Devices (Chapter 1), CRC Press, ISBN-13: 978-1-4398-8223-8, 2015.

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