Assistant Professor Department of Materials Science and Engineering
Dr. Changjian Li graduated from National University of Singapore with a BS and BEng degree in 2011, and obtained a Ph.D. degree in Integrative Science and Engineering Program in 2015 in the same University. He worked on the functional oxide thin film growth, properties to develop prototypical device applications. From 2016-2021, he worked in Materials Science and Engineering department of the same university as a research fellow and senior research fellow. He studied the structure-property relationship from the atomic scale using the aberration-corrected scanning transmission microscope (AC-STEM). He also set up the in-situ heating and biasing STEM facility to understand the working mechanism of functional devices. He joined SUSTech in 2020 Feb as an assistant professor. He had published over 16 research papers as the first author or corresponding author, including Science, Advanced Materials, Physical Review X, Nano Letters, Advanced Functional Materials; the total citation is over 1300 times.
As Moores' law is approaching the limit, the traditional microelectronic industry based on Von Neumann architecture is facing tremendous challenges. Functional oxides have huge potential as fundamental computing elements mimicking our brain. Dr. Li's research focuses on ferroic materials and there applications as nonvolatile memories and memristive devices. It is a hardware approach for high speed, low power neuromorphic computing: there are three research themes:
1. Physical properties of nanoscale ferroelectricity and ferromagnetism,
2. Memory and memristive devices based on ferroic materials and their key performance
3. In-situ atomic-scale STEM-EELS characterizations, electric/magnetic field mapping within the ferroic materials.