Assistant Professor Department of Materials Science and Engineering

Dr. Changjian Li graduated from National University of Singapore with a BS and BEng degree in 2011, and obtained a Ph.D. degree in Integrative Science and Engineering Program in 2015 in the same University. He worked on the functional oxide thin film growth, properties to develop prototypical device applications. From 2016-2021, he worked in Materials Science and Engineering department of the same university as a research fellow and senior research fellow. He studied the structure-property relationship from the atomic scale using the aberration-corrected scanning transmission microscope (AC-STEM). He also set up the in-situ heating and biasing STEM facility to understand the working mechanism of functional devices. He joined SUSTech in 2020 Feb as an assistant professor. He had published over 16 research papers as the first author or corresponding author, including Science, Advanced Materials, Physical Review X, Nano Letters, Advanced Functional Materials; the total citation is over 1300 times.

Personal Profile


As Moores' law is approaching the limit, the traditional microelectronic industry based on Von Neumann architecture is facing tremendous challenges. Functional oxides have huge potential as fundamental computing elements mimicking our brain. Dr. Li's research focuses on ferroic materials and there applications as nonvolatile memories and memristive devices. It is a hardware approach for high speed, low power neuromorphic computing: there are three research themes:

1. Physical properties of nanoscale ferroelectricity and ferromagnetism,

2. Memory and memristive devices based on ferroic materials and their key performance

3. In-situ atomic-scale STEM-EELS characterizations, electric/magnetic field mapping within the ferroic materials.


Under development

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Key publications 

  1. X. Renshaw Wang†, C. J. Li†, W. M. Lü, T. R. Paudel, D. P. Leusink, M. Hoek, Nicola Poccia, Arturas Vailionis, T. Venkatesan, J. M. D. Coey, E. Y. Tsymbal, Ariando and H.Hilgenkamp “Imaging and control of ferromagnetism in a polar antiferromagnet” Science, 349, 716 (2015) † Co-first author.
  2. C. J. Li, L.S. Huang, T. Li, W. M. Lü, X. P. Qiu, Z. Huang, Z.Q. Liu, Z.S.W. Zeng, R. Guo, Y.L. Zhao, K.Y. Zeng, JMD. Coey, J. S. Chen, Ariando and T. Venkatesan “Ultrathin of BaTiO3 based Ferroelectric Tunnel Junctions through Interface Engineering” Nano Letters, 15 (4), 2568 (2015)
  3. M. S. Li†, C. H. Tang†, T. R. Paudel, D. S. Song, W. M. Lü, K. Han, Z. Huang, S. W. Zeng, X. Renshaw Wang*, P. Yang, Ariando, J. S. Chen, T. Venkatesan, E. Y. Tsymbal, C. J. Li*, S. J. Pennycook*, “Controlling Magnetic Properties of LaMnO3/SrTiO3 Heterostructures by Stoichiometry and Electronic Reconstruction: Atomic-Scale Evidence” Advanced Materials31, 1901386 (2019) *Corresponding author.
  4. M. S. Li, Z. Huang*, C. H. Tang, D. S. Song, T. R. Mishra, Ariando, T. Venkatesan, C. J. Li*, Stephen John Pennycook* “Correlated Lattice Instability and Emergent Charged Domain Walls crossing Oxide Heterointerfaces” Advanced Functional Materials, 29, 1906655 (2019) *Corresponding author.
  5. W.M. Lü*, C. J. Li*, L. M. Zheng, J. X. Xiao, W. N. Lin, Q. Li, X. Renshaw Wang, Z. Huang, S. W. Zeng, K. Han, W. X. Zhou, K. Y. Zeng, J. S. Chen, Ariando, W. W. Cao and T. Venkatesan* “Multi non-volatile state resistive switching arising from ferroelectricity and oxygen vacancy migration” Advanced Materials 29, 1606165 (2017). *Corresponding author.
  6. Z. Q. Liu†, C. J. Li†, W. M. Lu, X. H. Huang, Z. Huang, S.W. Zeng, X. P. Qiu, L. S. Huang, A. Annadi, J. S. Chen, J. M. D. Coey, T. Venkatesan, and Ariando “Origin of the Two-Dimensional Electron Gas at LaAlO3/SrTiO3 Interfaces: The Role of Oxygen Vacancies and Electronic Reconstruction” Physical Review X3, 021010 (2013). † Co-first author. (top 1% highly cited).
  7. C. J. Li, D. S. Song*, M. S. Li, C. H. Tang, D. Q. Xue, D. Y. Wan, S. J. Pennycook*, “Atomic-scale characterization of point and extended defects in niobate thin films” Ultramicroscopy, 203, 82 (2019).

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  • Postdoc Researcher and Research Assistant Professor needed


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Join us

Functional oxide thin film research group is looking for two Postdoc/Research Assistant Professor positions in the following area:

  1. (In-situ) Aberration corrected scanning transmission electron microscopy (STEM). Study the structure-property correlation of functional thin films, eg. Ferroelectricity and multiferroics.
  2. Pulsed laser deposition of thin films and heterostructures, Explore novel ferroelectric thin films and ferroelectric field effect transistors for neuromorphic computing.


Available equipment:

Double Cs corrected TEM (Titan Themis G2), Cs corrected Environmental TEM

Pulsed laser deposition, Physical Property Measurement System (PPMS)


PhD degree in Physics, Materials Science and related field.


Minimum annual salary 330K RMB. Salary is commensurate with experience.





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