副教授 深港微电子学院
课题组主要从事高性能和新原理逻辑、传感器件研究, 探索其在下一代信息和生命健康等领域的应用。至今已在相关领域取得多项突破性进展,在Nature和Science等国际顶级期刊上发表论文四十余篇,授权发明专利一项,参与编写书籍一本。论文共被引用4000余次。主持国家自然科学基金高层次人才项目、面上项目、深圳市基金委项目和南山区项目。此外还受邀担任多个杂志审稿人以及基金评审专家
获得荣誉:
入选国家高层次青年人才计划,2022
入选深圳市高层次人才计划,2021
获中国材料研究学会科学技术奖一等奖,2020
招生招聘:
本课题组具有良好的学术氛围,多学科交叉,欢迎对科学研究感兴趣,具有微电子/物理/材料/生物背景的博士后、研究生等与陈鹏博士联系:chenp6@sustech.edu.cn
个人简介
研究领域
1. 高性能和新原理逻辑、传感器件开发与制造
2. 器件集成技术开发
后摩尔时代的微纳电子器件与电路即将达到其性能极限。本课题组通过开发新材料和新原理器件等基础层面的创新研究,推动现有微纳电子器件与电路突破其性能极限,持续推动后摩尔时代信息和传感技术的前沿发展。
教学
SME201 微电子及集成电路基础
SME5028 电子薄膜与器件简介
SME204 微电子基础-半导体器件
学术成果 查看更多
代表性论文:”#” denotes equal contribution
- Peng Chen#, Timothy Atallah#, Zhaoyang Lin, Peiqi Wang, Sung-Joon Lee, Junqing Xu, Zhihong Huang, Xidong Duan, Yuan Ping, Yu Huang, Justin Caram, Xiangfeng Duan. Approaching the intrinsic exciton physics limit in two dimensional semiconductor diodes. Nature 599, 404–410 (2021)
- Zhengwei Zhang#, Peng Chen#, Xidong Duan, Ketao Zang, Jun Luo, Xiangfeng Duan, Robust epitaxial growth of two-dimensional heterostructures, multiheterostructures, and superlattices. Science 357, 788-792 (2017)
- Zhaoyang Lin, Yuan Liu, Udayabagya Halim, Mengning Ding, Yuanyue Liu, Yiliu Wang, Chuancheng Jia, Peng Chen, Xidong Duan, Chen Wang, Frank Song, Mufan Li, Chengzhang Wan, Yu Huang, Xiangfeng Duan, Solution-processable 2D semiconductors for high-performance large-area electronics, Nature 562, 254–258 (2018)
- Bo Li#, Zhong Wan#, Cong Wang#, Peng Chen#, Bevin Huang, Xing Cheng, Qi Qian, Jia Li, Zhengwei Zhang, Guangzhuang Sun, Bei Zhao, Huifang Ma, Ruixia Wu, Zhongming Wei, Yuan Liu, Lei Liao, Yu Ye, Yu Huang, Xiaodong Xu, Xidong Duan, Wei Ji, Xiangfeng Duan. Van der Waals epitaxial growth of air-stable CrSe2 nanosheets with thickness tunable magnetic order. Nature Materials 20, 818–825 (2021)
- Sung-Joon Lee, Zhaoyang Lin, Jin Huang, Christopher S Choi, Peng Chen, Yuan Liu, Jian Guo, Chuancheng Jia, Yiliu Wang, Laiyuan Wang, Qingliang Liao, Imran Shakir, Xidong Duan, Bruce Dunn, Yue Zhang, Yu Huang, Xiangfeng Duan, Programmable devices based on reversible solid-state doping of two-dimensional semiconductors with superionic silver iodide. Nature Electronics 3, 630–637 (2020)
- Peng Chen, Cai Cheng, Cheng Shen, Jing Zhang, Shuang Wu, Xiaobo Lu, Shuopei Wang, Luojun Du, Kenji Watanabe, Takashi Taniguchi, Jiatao Sun, Rong Yang, Dongxia Shi, Sheng Meng, Kaihui Liu and Guangyu Zhang. Band evolution of two-dimensional transition-metal dichalcogenides under electric fields. Applied Physics Letters 115, 083104 (2019)
- Peng Chen, Zhengwei Zhang, Xidong Duan, Xiangfeng Duan. Chemical synthesis of two-dimensional atomic crystals, heterostructures and superlattices. Chemical Society Reviews 47, 3129-3151 (2018)
- Peng Chen, Ting Ting Zhang, Jing zhang, Jianyong Xiang, Hua Yu, Shuang Wu, Xiaobo Lu, Guole Wang, Fusheng Wen, Zhongyuan Liu, Rong Yang, Dongxia Shi, Guangyu Zhang. Gate Tunable WSe2–BP van der Waals Heterojunction Devices. Nanoscale 8, 3254-3258 (2016)
- Huifang Ma#, Peng Chen#, Bo Li, Jia Li, Ruoqi Ai, Zhengwei Zhang, Guangzhuang Sun, Kangkang Yao, Zhaoyang Lin, Bei Zhao, Ruixia Wu, Xuwan Tang, Xidong Duan, Xiangfeng Duan. Thickness-Tunable Synthesis of Ultrathin Type-II Dirac Semimetal PtTe2 Single Crystals and Their Thickness-Dependent Electronic Properties. Nano Letters 18, 3523-3529 (2018)
- Zhengwei Zhang#, Peng Chen#, Xiangdong Yang, Yuan Liu, Huifang Ma, Jia Li, Bei Zhao, Jun Luo, Xidong Duan, Xiangfeng Duan. Ultrafast growth of large single crystals of monolayer WS2 and WSe2. National Science Review 7, 737-744 (2020)
- Peng Chen, Jianyong Xiang, Hua Yu, Jing zhang, Guibai Xie, Shuang Wu, Xiaobo Lu, Guole Wang, Jing Zhao, Fusheng Wen, Zhongyuan Liu, Rong Yang, Dongxia Shi and Guangyu Zhang. Gate Tunable MoS2–black phosphorus Heterojunction Devices. 2D Materials, 2, 034009 (2015)
- Peng Chen and G. Y. Zhang, Carbon-based Spintronics. Science China-Physics Mechanics & Astronomy 56 (1), 207-221 (2013)
- Shuang Wu, Bing Liu, Cheng Shen, Si Li, Xiaochun Huang, Xiaobo Lu, Peng Chen, Guole Wang, Duoming Wang, Mengzhou Liao, Jing Zhang, Tingting Zhang, Shuopei Wang, Wei Yang, Rong Yang, Dongxia Shi, Kenji Watanabe, Takashi Taniguchi, Yugui Yao, Weihua Wang, and Guangyu Zhang, Magnetotransport properties of graphene nanoribbons with zigzag edges, Physical Review Letters 120, 216601, (2018)
- Duoming Wang, Guorui Chen, Chaokai Li, Meng Cheng, Wei Yang, Shuang Wu, Guibai Xie, Jing Zhang, Jing Zhao, Xiaobo Lu, Peng Chen, Guole Wang, Jianling Meng, Jian Tang, Rong Yang, Congli He, Donghua Liu, Dongxia Shi, Kenji Watanabe, Takashi Taniguchi, Ji Feng, Yuanbo Zhang, Guangyu Zhang,Thermally induced graphene rotation on hexagonal boron nitride,Physical Review Letters 116,126101 (2016)
书籍:《自旋电子学导论》,第21章:碳基自旋电子学,科学出版社,2015
团队成员 查看更多
加入团队
负责在以下三个领域开展研究工作:
(1)高性能微纳电子器件开发与制造
(2)基于高性能微纳电子器件的集成电路技术开发
(3)新原理微纳电子器件探索
招聘岗位:
一、博士后岗位
1、应聘条件
(1)已经或即将博士毕业;
(2)对微纳电子器件研究具有极高的热情;
(3)基础扎实、逻辑思维严密、创新能力强;
(4)有半导体材料、微纳电子器件加工、微纳电子器件测量等相关实验背景,并已在相关领域发表过一篇论文者优先考虑;
2、岗位待遇
(1)年薪33万起(可根据申请人学术水平调整),并按照深圳市有关规定享受社会保险和住房公积金,此外还享受过节费、餐补、计划生育奖励、高温补贴、免费体检等福利待遇。
(2)特别优秀者可以入选校长卓越奖励计划,年薪可达41.5万(含广东省及深圳市补助)。学校为每位博士后提供在站期间2.5万元的学术交流资助。
二、交流学生
1、应聘条件
申请人为微纳电子材料与器件相关专业在读硕士或者博士生;
乐观积极,具备强烈求知欲、英文读写能力者优先,有科研经历积累者优先。
2、岗位待遇
可根据学生自身情况给与一定的生活补贴;实验室会全面培养入选者的各方面能力,包括科学研究、论文发表等;
申请方式
请申请人直接将申请材料发送至:chenp6@sustech.edu.cn,
邮件主题请注明:"姓名-学校/工作单位-申请岗位"。
申请材料包括:
个人简历
代表性论文及其他能够证明本人成果与能力的材料
应聘材料将予以严格保密,初选合格者会尽快安排面试。