Yuefei Cai

Assistant Professor Department of Electrical and Electronic Engineering

Dr Yuefei Cai joined SUSTech in July, 2022. His past research focuses on wide bandgap semiconductor, to be specific, GaN devices (design, fabrication and characterization) and device monolithic integration. He has given several oral presentations in top conferences in compound semiconductor such as IWN, ICNS and CSW, published more than 20 papers in ACS Nano, ACS Photonics, IEEE EDL, APL, etc. His research has received many favorable comments from peers and been reported by famous technology media, such as IEEE Spectrum, Semiconductor Today and Compound Semiconductor. He is also the IEEE Senior Member , Optica Member and reviewer of Photonics Research.

Personal Profile

Yuefei Cai joined SUSTech as an Assistant Professor in July 2022. His research focuses on wide-bandgap semiconductor, including GaN devices.

Education

Aug. 2013 – Jan. 2018: Ph.D. The Hong Kong University of Science and Technology, Department of Electronic and Computer Engineering

Sept. 2011 – Jul. 2013:  M.Phil. Harbin Institute of Technology, Physics Electronics
Sept. 2007 – Jul. 2011: B.Sc.   Harbin Institute of Technology, Electronic Science and Technology

Employment

Jul. 2021- Present: Assistant Professor. Southern University of Science and Technology, Department of Electronic and Electrical Engineering, Shenzhen, China
Sept. 2021- Jul.2022.  Associate Researcher. Tan Kah Kee Innovation Laboratory, Institute of Future Display Technology, Xiamen, China
Mar. 2018-Jun. 2021. Postdoctoral Research Associate. The University of Sheffield, Centre for GaN Materials and Devices, Sheffield, United Kingdom

Research

Compound semiconductor,

Wide bandgap semiconductor,

GaN electronic, optoelectronic and acoustic devices.


Teaching

EE203 Solid-state Electronics (Undergraduate, Spring semester)

EE323 Digital Signal Processing(Undergraduate, Fall semester)

 

Teaching awards:

1. Nominated for the 2025 "Most Popular Undergraduate Teacher" Award at SUSTech

2. 2025 Outstanding Graduate Student Supervisor Award at SUSTech


Publications Read More

After joining SUSTech as an independent principal investigator (PI). Publications are listed as below (* represents corresponding author): 

1. R. Zhang, H. Liu, Y. Cai*, “Monolithically integrating GaN microLEDs on HEMTs with a new approach for lower on-resistance”, IEEE Electron Device Letters, 46(7), 1079-1082 (2025). DOI: 10.1109/LED.2025.3571115. (Featured by Semiconductor Today)

2. H. Liu, R. Zhang, and Y. Cai*, “Monolithic integration of p-MOSFETs with micro-LEDs on the same GaN LED epi”, Optics Letters, 50(9), 2954-2957 (2025).  DOI: 10.1364/OL.559230.

3. Y. Cai*, K. Wu, Z. Ma, S. Zhao and Y. Zhang*, “Integration of large-extinction-ratio resonators with grating couplers and waveguides on GaN-on-sapphire at O-band”, Optics Express, 31(26): 42795- 42806 (2023). DOI: 10.1364/OE.504505

 

Before joining SUSTech, Dr. Yuefei Cai focused on GaN semiconductor optoelectronic devices. Here are some representative publications:

1. C. C. Lin, Y. R. Wu, H. C. Kuo, et al. “The micro-LED roadmap: status quo and prospects”. JPhys Photonics, vol. 5, no. 4, 042502 (2023). DOI: 10.1088/2515-7647/acf972

2. Y. Cai*, J. Bai, and T. Wang*. “Review of a direct epitaxial approach to achieving micro–LEDs”, Chinese Phys. B, vol. 32, no.1, 018508 (2023). DOI: 10.1088/1674-1056/ac90b5

3. Y. Cai, X. Yu, S. Shen, X. Zhao, L. Jiu, C. Zhu and T. Wang*, “Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method,” Semiconductor Science and Technology, vol. 34, no. 4, pp. 045012 (2019). DOI: 10.1088/1361-6641/ab08bf

4. Y. Cai, X. Zou, Y. Gao, L. Li, P. K. T. Mok, and K. M. Lau*, “Low-flicker lighting from high-voltage LEDs driven by a single converter-free driver,” IEEE Photonics Technology Letters, vol. 29, no.19, pp. 1675-1678 (2017). DOI: 10.1109/LPT.2017.2742861

5. Y. Cai, X. Zou, W. C. Chong, and K. M. Lau*, “Optimization of electrode structure for flip-chip HVLED via two-level metallization,” Physica Status Solidi (a), vol. 213, no.5, pp. 1199-1203 (2016). DOI: 10.1002/pssa.201532803

 

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