Graduate students of the research group participated in the International Conference (ISFT2020) and gave a report

2020-12-18

         From September 18th to 20th, 2020, Professor Deng Hui led the research team doctoral student Yi Rong, doctoral student Liang Shaoxiang and master student Li Rulin to participate in the 2020 China (International) Smoothing Technology and Surface Engineering Conference in Changzhou, Jiangsu (ISFT2020) and respectively conducted oral reports.

        The title of Yi Rong's report is "Isotropic Etching and Polishing of Titanium: Study on the Mechanism of Etching Anisotropy". Based on the electrochemical dissolution mechanism of metal materials, this project has conducted in-depth research on the adjustment method of the etching orientation of pure titanium in the electrochemical etching process. By changing the experimental electrolyte concentration, temperature and other parameters, the results achieved the adjustment of the etching orientation of pure titanium.

        The title of Liang Shaoxiang's report is "Ultra-precision polishing method for quartz components based on plasma-induced surface atom migration effect: molecular dynamics simulation study". Based on the principle of surface atom migration effect, this project studied the specific process and key technology of ICP plasma-induced ultra-precision polishing of quartz glass components through molecular dynamics simulation technology, and analyzed the evolution process of quartz surface morphology during polishing. In-depth research has been done on the migration law of atoms at high and low points, the limit of roughness, the influence of surface temperature and cooling rate.

        Li Rulin’s report titled "Plasma Isotropic Etching and Polishing of Synthetic Quartz" mainly studied the method of processing synthetic quartz based on atmospheric pressure inductively coupled plasma, and formed isotropic etching on the surface of quartz through chemical etching of plasma. The pit, the use of the growth and expansion of the etching pit finally achieved a polished surface of 17.4 nm, and the material removal efficiency was as high as 5.6 μm/min.