• Journal Papers
  • Invention Patent


  1. Y Zhang#, S Liang#, Y Zhang, R Li, Z Fang, S Wang and H Deng* : Role of oxygen in surface kinetics of SiO2 growth on single crystal SiC at elevated temperatures, Ceramics International 47 (2021) pp1855-1864. (JCR Q1, IF=3.830)


  1. H Liu, Y Zhang, R Yi, R Li and H Deng*: Nonaqueous synthesis of TiO2 nanorods using inductively coupled plasma, Ceramics International 46 (2020) pp8615-8624. (JCR Q1, IF=3.830)
  2. L Zhang, H Deng*: Highly efficient and damage-free polishing of GaN (0001) by electrochemical etching-enhanced CMP process, Applied Surface Science 514 (2020) 145957 pp1-9. (JCR Q1, IF=6.182)
  3. R Yi, Yi Zhang, X Zhang, F Fang, H Deng*: A generic approach of polishing metals via isotropic electrochemical etching, International Journal of Machine Tools and Manufacture 150 (2020) 103517 pp1-11. (JCR Q1, IF=8.019)
  4. P Sun, Y Wang, P Liu, Y Zhu, Y Zhao, D Zhao,H Deng*:Synergetic Effect of 1, 2, 4- triazole and Glycine on Chemical Mechanical Planarization of Aluminum at Low Polishing Pressurein an Eco-Friendly Slurry, ECS Journal of Solid State Science and Technology 9(2020) 034003 pp1-9.(JCR Q3, IF=2.142)
  5. W Guo, S Kumar, X Zhang, H Deng*:A Study on the Damage Layer Removal ofSingle Crystal Silicon Wafer after Atmospheric-Pressure Plasma Etching, Journal of Micro- and Nano-Manufacturing 8(2020) 024501 pp1-5. (JCR Q2, IF=1.070)
  6. Y Zhang# , H Chen#, D Liu and H Deng* :High efficient polishing of sliced 4H-SiC (0001) by molten KOH etching, Applied Surface Science 525 (2020) 146532 pp1-9.(JCR Q1, IF=6.182)
  7. R Li, Y Zhang, Y Zhang, W Liu, Y Li and H Deng*: Plasma-based isotropic etching polishing of synthetic quartz, Journal of Manufacturing Processes 60 (2020) pp447-156. (JCR Q1, IF=4.086)
  8. Z Fang#, Y Zhang#, R Li, Y Liang and H Deng*: An efficient approach for atomic-scale polishing of single-crystal silicon via plasma-based atom-selective etching, International Journal of Machine Tools and Manufacture 159 (2020) 103649 pp1-15. (JCR Q1, IF=6.030)


  1. S Qin and H Deng *:  Electrochemical etching of tungsten for fabrication of sub-10 nm tips with a long taper and a large shank, Nanomanufacturing and Metrology 2 (2019) pp235-240. (New Journal ,Invited)
  2. X Zhang *, H Deng, K Liu: Oxygen-shielded ultrasonic vibration cutting to suppress the wear of diamond tools, CIRP Annals Manufacturing Technology 68 (2019) pp69-72. (JCR Q1, IF=3.641)
  3. Y Zhang, R Li, Y Zhang, D Liu, H Deng*: Indiscriminate Revelation of Dislocations in Single Crystal SiC by Inductively Coupled Plasma Etching, Journal of the European Ceramic Society 39 (2019) pp2831-2838. (JCR Q1, IF=4.495)
  4. F Wang, X Zhang, H Deng*: A Comprehensive Study on Electrochemical Polishing of Tungsten, Applied Surface Science 475 (2019) pp587-597. (JCR Q1, IF=6.182)


  1. X Zhang, R Huang, K Liu, A Kumar, H Deng*: Suppression of diamond tool wear in machining of tungsten carbide by combination ultrasonic vibration and electrochemical processing, Ceramics International 44 (2018) pp4142-4153. (JCR Q1, IF=3.830)
  2. H Deng*, N Liu, K Endo, K Yamamura: Atomic-scale polishing of carbon face of single crystal SiC by combination of thermal oxidation pretreatment and slurry polishing, Applied Surface Science 434 (2018) pp40-48. (JCR Q1, IF=6.182)
  3. N Liu, R Yi, H Deng*: Study of initiation and development of local oxidation phenomena during anodizing of SiC, Electrochemistr Communications 89 (2018) pp27-31. (JCR Q1, IF=4.333)

2017 (After joining SUSTech

  1. H Deng, X Zhang, K Liu, Kazuya Yamamura and Hirotaka Sato: Polishing of tungsten carbide by combination of anodizing and silica slurry polishing, Journal of The Electrochemical Society 164 (2017) E352-359. (JCR Q1, IF=3.662)
  2. H Deng, K. Endo and K. Yamamura: Damage-free finishing of CVD-SiC by a combination of dry plasma etching and plasma-assisted polishing, International Journal of Machine Tools and Manufacture 155 (2017) 38-46. (JCR Q1, IF=5.106)
  3.  H Deng, R Huang, K Liu, X Zhang: Abrasive-free polishing of tungsten alloy using electrochemical etching, Electrochemistry Communications 82 (2017) 80-84. (JCR Q1, IF=4.66)

Before 2017  

  • Shen, H. Deng, X. Zhang, K. Peng, K Yamamura: Preliminary study on atmospheric pressure plasma-based chemical dry figuring and finishing of reaction sintered silicon carbide, Optical Engineering 55 (2016) 105102 1-9.
  • X. Shen, Q Tu, H. Deng, G Jiang, X He, B Liu, K Yamamura: Comparative analysis on surface property in anodic oxidation polishing of reaction-sintered silicon carbide and single-crystal 4H silicon carbide, Applied Physics A 122 (2016) 1-8.
  • Deng, K. Endo and K. Yamamura: Atomic-scale and pit-free flattening of GaN by combination of plasma pretreatment and time-controlled chemical mechanical polishing, Applied Physics Letter 107 (2015) 051602 1-4 (JCR Q1).
  • Deng, K. Endo and K. Yamamura: Competition between surface modification and abrasive polishing: a method of controlling the surface atomic structure of 4H-SiC (0001), Scientific Reports 5 (2015) 8947 1-6 (JCR Q1).
  • Deng, K. Endo and K. Yamamura: Plasma-assisted polishing of gallium nitride to obtain a pit-free and atomically flat surface, CIRP Annals-Manufacturing Technology 64 (2015) 531- 534 (JCR Q1).
  • Deng, K. Hosoya, Y. Imanishi, K. Endo and K. Yamamura: Electro-chemical mechanical polishing of single-crystal SiC using CeO2 slurry, Electrochemistry Communications 52 (2015) 5-8 (JCR Q1).
  • X Shen, Q Tu, H. Deng, G Jiang, K Yamamura: Mechanism analysis on finishing of reaction-sintered silicon carbide by combination of water vapor plasma oxidation and ceria slurry polishing, Optical Engineering 54 (2015) 055106 1-8.
  • Deng, M. Ueda and K. Yamamura: Characterization of 4H-SiC (0001) surface processed by plasma assisted polishing, International Journal of Advanced Manufacturing Technology 72 (2014) 1-7.
  • Deng, K. Endo and K. Yamamura: Comparison of thermal oxidation and plasma oxidation of 4H-SiC (0001) for surface flattening, Applied Physics Letter 104 (2014) 101608 1-5 (JCR Q1).
  • Deng, K. Monna, T. Tabata, K. Endo and K. Yamamura: Optimization of the plasma oxidation and abrasive polishing processes in plasma-assisted polishing for high effective planarization of 4H-SiC, CIRP Annals-Manufacturing Technology 63 (2014) 529-532 (JCR Q1).
  • Deng and K. Yamamura: Atomically Flattening Mechanism of 4H-SiC (0001) in Plasma-assisted Polishing, CIRP Annals-Manufacturing Technology 62(2013) 575-578 (JCR Q1).
  • Shen, Y. Dai, H. Deng, C. Guan and K. Yamamura: Comparative analysis of oxidation methods of reaction-sintered silicon carbide for optimization of oxidation-assisted polishing Optics Express 21 (2013) 26123-26135.
  • Deng, K. Endo and K. Yamamura: Atomic-scale planarization of 4H-SiC (0001) by combination of thermal oxidation and abrasive polishing, Applied Physics Letter 103 (2013) 111603 1-4 (JCR Q1).
  • Shen, Y. Dai, H. Deng, C. Guan and K. Yamamura: Ultrasmooth reaction-sintered silicon carbide surface resulting from combination of thermal oxidation and ceria slurry polishing, Optics Express 21 (2013) 14780-14788.
  • Deng and K. Yamamura: Smoothing of reaction sintered silicon carbide using plasma assisted polishing, Current Applied Physics 12 (2012) S24-S28.
  • K Yamamura, Y Yamamoto, and H. Deng: Preliminary study on chemical figuring and finishing of sintered sic substrate using atmospheric pressure plasma, Procedia CIRP 3 (2012) 335- 339.
  • Yamamura, T. Takiguchi, M. Ueda, H. Deng, A. N. Hattori and N. Zettsu: Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface, CIRP Annals- Manufacturing Technology 60 (2011) 571-574.
  • H. Deng, T. Takiguchi, M. Ueda, A. N. Hattori, N. Zettsu and K. Yamamura: Damage-free dry polishing of 4H-SiC combined with atmospheric-pressure water vapor plasma oxidation, Japanese Journal of Applied Physics 50 (2011) 08JG05 1-4.

Deng Hui, an electrochemical polishing device. Authorized patent number: ZL 201721080739.3

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