张保平

教授 纳米科学与应用研究院

张保平,兰州大学物理系学士,中国电子科技集团第十三研究所硕士,日本东京大学应用物理博士。1994-2005年在日本理化学研究所(RIKEN)和夏普公司工作。曾任闽江学者特聘教授,厦门大学电子科学与技术学院副院长,2023年任南方科技大学纳米科学与应用研究院长聘教授。兼任“Semiconductor Science and Technology”执行编辑、“Nano-Micro Letters”编委、GaN领域主要国际、国内会议的程序委员会成员、教育部“紫外光发射材料与技术”等重点实验室学术委员会成员等多重身份。

张教授长期从事半导体相关的研究工作,包括InP,GaAs,ZnSe,ZnO等。2006回国以来主要进行第三代半导体GaN材料与器件研究,特别是蓝绿光垂直腔面发射激光器(VCSEL)等,是大陆唯一研制出该器件的课题组负责人,并且在绿色VCSEL方面处于国际先进水平。采用量子点,将该器件的发光波长从国际上报道的503 nm延伸到了565 nm,并实现了室温连续激射,阈值电流达到国际最好;发明了利用蓝光量子阱中局域态和谐振腔模式相耦合,实现绿光VCSEL的新方法;首次在InGaN量子阱中实现了激子极化激元的室温激射;首次实现深紫外波段VCSEL(276 nm)。

至今发表论文200余篇,授权发明专利20余项。

 

个人简介

研究领域

半导体光电子学、宽禁带半导体、垂直腔面发射激光器(VCSEL)、LED、太阳能电池、低维结构等。


学术成果 查看更多

  1. Ou, Y. Mei, H. Long, Y. K. Wang, T. Yang, Y. H. Chen, L. Y. Ying, Z. M. Zheng and B. P. Zhang, “Orthogonally and linearly polarized green emission from a semipolar InGaN based microcavity” Nanophotonics, 13(2023):75-83.
  2. Yang, Y. H. Chen, Y. C. Wang, W. Ou, L. Y. Ying, Y. Mei, A. Q. Tian, J. P. Liu, H. C. Guo and B. P. Zhang,”Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity“, Nano-Micro Letters, 15(2023): 223.
  3. Hou, T. Yang, S. S. Fan, H. Xu, D. Lida, Y. J. Liu, Y. Mei, G. E. Weng, S. Q. Chen, Weng,
  4. P. Zhang and K. Ohkawa, “Optical properties of InGaN-based red multiple quantum wells“, Applied physics letters, 26(2022): 120.
  5. M. Zheng, Y. K. Wang, J. Hoo, S. P. Guo, Y. Mei, H. Long, L. Y. Ying, Z. W. Zheng and B. P. Zhang*High-quality AlGaN epitaxial structures and realization of UVC vertical cavity surface-emitting lasers”, SCIENCE CHINA Materials, 66(2023)1978-1988.
  6. L. Lin, Y. Man, Z. Y. Lv, B. P. Zhang, H. Xu, D. Q. Yu, X. C. Yang, Y. He, X. W. Shi, L. Y. Ying and D. Zhang*, “High-Gain of NdIII Complex Doped Optical Waveguide Amplifiers at 1.06 and 1.31µm Wavelengths Based on Intramolecular Energy Transfer Mechanism“, Advanced Materials, 35(2023):2209239.
  7. Yuan, M. K. Zhang, Z. Fu, S. Han, Y. N. Zhang, S. X.Wu, R. D. Hong, X. P. Chen, B. P. Zhang,J. Chen Wang and F. Zhang, “Metal-Semiconductor-Metal Ultraviolet Photodetectors Based on Al Nanoparticle in 4H-SiC Microholes“, ACS Appl. Nano Mater, 6(2023) :11.
  8. Mei, M. C. Xie, T. Yang, X. Hou, W. Ou, H. Long, L. Y. Ying, Y. J. Liu, G. E. Weng, S. Q. Chen and B. P. Zhang, “Improvement of the Emission Intensity of GaN-Based Micro-Light Emitting Diodes by a Suspended Structure”, ACS Photonics 2022, 9, 3967−3973.
  9. Mei, M. C. Xie, H. Long, L. Y. Ying, B. P. Zhang, “Low threshold GaN-based microdisk lasers on Silicon with high Q factor“, J. Lightwave Technology, 40.9 (2022): 2952-2958.
  10. (特邀)王玉坤,郑重明,龙浩,梅洋,张保平,“氮化物垂直腔面射激光器的展与挑”,光子学报,2 (2022): 0251203.
  11. Yang, H. Xu, H. Long, L. Y. Ying, R. H. Luo, M. J. Zhong, W. R. Lu, X. Hou, Y. Mei, B. P. Zhang, “GaN-Based Green Resonant-Cavity Light-Emitting Diodes with Al mirror and copper plate“, Optics Letters, 47.11 (2022): 2858-2861.
  12. Ou, Y. Mei, Daisuke Iida, H. Xu, M. C. Xie, Y. W. Wang, L. Y. Ying, B. P. Zhang, Kazuhiro Ohkawa, “InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes“,J.Lightwave Technology, 40.13 (2022): 4337-4343.
  13. Hou, S. S. Fan, H. Xu, Daisuke Iida, Y. J. Liu, Y. Mei, G. E. Weng, S. Q. Chen B. P. Zhang, K. Ohkawa, “Optical properties of InGaN-based red multiple quantum wells“, Applied Physics Letters, 120.26 (2022): 261102.
  14. Mei, Y. H. Chen, L.Y. Ying, A. Q. Tian, G. E. Weng, H. Long, J. P. Liu and B. P. Zhang, “Dual-wavelength switching in InGaN quantum dot micro-cavity light-emitting diodes“, Optics Express, 30.15 (2022): 27472-27481.
  15. R. Luo, B. P. Zhang, Y. H. Lu, Y. Mei and L. Shen, “Advances in application of ultraviolet irradiation for biofilm control in water and wastewater infrastructure“, Journal of Hazardous Materials, 421 (2022): 126682.
  16. Mei, Y. H. Chen, L. Y. Ying, Z. W. Zheng, H. Long, B. P. Zhang, “High Q factor Electrically Injected Green Micro Cavity“, J. Lightwave Technology, 39.9 (2021): 2895-2900.
  17. M. Zheng, Y. Mei, H. Long, H. Jason, S. P. Guo, Q. X. Li, L.Y. Ying, Z. W. Zheng and B. P. Zhang, “AlGaN-based deep ultraviolet vertical cavity surface emitting laser“, IEEE Electron Device Letters, 42.3 (2021): 375-378.
  18. Mei, T. R. Yang, W. Ou, Z. M. Zheng, H. Long, L. Y. Ying, B. P. Zhang, “Low-threshold wavelength-tunable ultraviolet vertical-cavity surface-emitting lasers from 376 to 409 nm“, Fundamental Research, 1.6 (2021): 684-690.
  19. Hou, S. S. Fan, D. Iida, Y. Mei, B. P. Zhang*, K. Ohkawa, “Photoluminescence of InGaN-based red multiple quantum wells“, Optics Express, 29.19 (2021): 30237-30243.
  20. J. Z.Wu, H. Long*, X. L. Shi, S. Luo, Z. H. Chen, Z. C. Feng, L. Y. Ying, Z. W. Zheng and B. P. Zhang, “Polariton lasing in InGaN quantum wells at room temperature“, Opto-Electron Adv, 2.12 (2019): 190014-1.
  21. (Invited) Mei, R. B. Xu, L. Y. Ying, J. P. Liu, Z.W. Zheng, H. Long, B. P. Zhang, “Room temperature continuous wave lasing of GaN-based greenvertical-cavity surface-emitting lasers“, Gallium Nitride Materials and Devices XIV, 10918 (2019): 109181H; SPIE OPTO, 2019, San Francisco, California, United States
  22. P.O. Nyangaresi, Y. Qin, G. L. Chen, B. P. Zhang, Y. H. Lu, and L. Shen “Comparison of the performance of pulsed and continuous UVC-LED irradiation in the inactivation of bacteria”, Water Research, 157 (2019): 218-
  23. P.O. Nyangaresi, Y. Qin, G. L. Chen, B. P. Zhang, Y. H. Lu, and L. Shen, “Effects of single and combined UV-LEDs on inactivation and subsequent reactivation of E. coli in water disinfection“, Water Research, 147 (2018): 331-341.
  24. (REVIEW) H. C.Yu, Z. W. Zheng, Y. Mei, R. B. Xu, J. P. Liu, H. Yang, B. P. Zhang, T. C. Lu, and H. C. Kuo, “Progress and prospects of GaN-based VCSEL from near UV to green emission“, Progress in Quantum Electronics, 57 (2018): 1–19.
  25. Y.Mei, G. E. Weng, B. P. Zhang, J. P. Liu, W. Hofmann, L. Y. Ying, J. Y. Zhang, Z. C. Li, H. Yang and H. C. Kuo, “Quantum dot vertical-cavity surface-emitting lasers covering the “green gap”“, Light: Science & Applications. 6.1 (2017): e16199.

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  • 纳米科学与应用研究院张保平教授与江西德瑞光电共建先进光电器件及应用联合实验室

    2024-10-23

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【岗位名称】研究人员(如科研助理、研究副教授、高级访问学者等)
【岗位职责】
1、研究内容:GaN半导体激光器件、新型LED等光电子器件相关的材料、制备、测试和应用;
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【岗位要求】
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