Research Assistant Professor Academy for Advanced Interdisciplinary Sciences
Dr. Wang joined Southern University of Science and Technology (SUSTech) as a Research Assistant Professor and was awarded an Oversea High-Caliber Personnel (Peacock Plan Level C) in 2018. He studied at University of Nevada, Las Vegas (UNLV) as a joint PhD candidate from 2014 to 2016. After earning his Ph.D. degree from Sichuan University in China in June 2016, he remained with UNLV as a Postdoctoral Associate. During this period, Dr. Wang is engaged in synthesis, characterization and applications of novel superhard, layered, or magnetic materials by use of multi-anvil high-pressure apparatus, then evaluating their structure, elastic and plastic properties, electrical transport property, optical property, and magnetic property combined with in situ synchrotron XRD, Raman, XES, and electrical resistance measurements at high pressure in advanced photon source (APS), Argonne National Laboratory (ANL).
Dr. Wang has a background in high pressure physics and large volume press (LVP) techniques. His research interests focus on the syntheses and property studies of novel materials (superhard, ceramics, transition-metal borides, phosphides, and layered sulfides) using LVP and diamond anvil cell (DAC) combined with synchrotron XRD under extreme conditions. He first synthesized superhard diamond-cBN alloy using doule-stage assembly in a cubic LVP, which were reported by by many medias and magazines, such as Forbes, AIP News、ScienceDaily etc. Dr. Wang has published 24 SCI papers on different Journal including Physical Review B、Applied Physics Letters, Inorganic Chemistry, Scientific Reports, Journal of Applied Physics and was involving in scientific research projects.
1）Synthesis and Characterization of New Materials under High Pressure;
2）Elastic and Plastic Performance Studies of Materials under High-Pressure and Temperature;
3）Crystal Structures and Photoelectricity Properties Investigation of 2d Materials under High-Pressure;
4）Spin-crossover, Large-Volume Collapse, and Semiconductor-to-Metal Transition of High-Spin State Materials under High Pressure.